prikaz prve stranice dokumenta Electron transport in ultra-thin strained InGaAs MOS devices
No public access
doctoral thesis
Electron transport in ultra-thin strained InGaAs MOS devices
Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing, 2018. urn:nbn:hr:168:651466

University of Zagreb
Faculty of Electrical Engineering and Computing
Department of Electronics, Microelectronics, Computer and Intelligent Systems

Cite this document

Krivec, S. (2018). Electron transport in ultra-thin strained InGaAs MOS devices (Doctoral thesis). Retrieved from https://urn.nsk.hr/urn:nbn:hr:168:651466

Krivec, Sabina. "Electron transport in ultra-thin strained InGaAs MOS devices." Doctoral thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, 2018. https://urn.nsk.hr/urn:nbn:hr:168:651466

Krivec, Sabina. "Electron transport in ultra-thin strained InGaAs MOS devices." Doctoral thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, 2018. https://urn.nsk.hr/urn:nbn:hr:168:651466

Krivec, S. (2018). 'Electron transport in ultra-thin strained InGaAs MOS devices', Doctoral thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, accessed 01 December 2020, https://urn.nsk.hr/urn:nbn:hr:168:651466

Krivec S. Electron transport in ultra-thin strained InGaAs MOS devices [Doctoral thesis]. Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing; 2018 [cited 2020 December 01] Available at: https://urn.nsk.hr/urn:nbn:hr:168:651466

S. Krivec, "Electron transport in ultra-thin strained InGaAs MOS devices", Doctoral thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, Zagreb, 2018. Available at: https://urn.nsk.hr/urn:nbn:hr:168:651466

Islandora Bookmark - Please login to use this feature