No public access
doctoral thesis
Electron transport in ultra-thin strained InGaAs MOS devices

Sabina Krivec (2018)
University of Zagreb
Faculty of Electrical Engineering and Computing
Department of Electronics, Microelectronics, Computer and Intelligent Systems
Cite this document...

Krivec, S. (2018). Electron transport in ultra-thin strained InGaAs MOS devices (Doctoral thesis). Retrieved from https://urn.nsk.hr/urn:nbn:hr:168:651466

Krivec, Sabina. "Electron transport in ultra-thin strained InGaAs MOS devices." Doctoral thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, 2018. https://urn.nsk.hr/urn:nbn:hr:168:651466

Krivec, Sabina. "Electron transport in ultra-thin strained InGaAs MOS devices." Doctoral thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, 2018. https://urn.nsk.hr/urn:nbn:hr:168:651466

Krivec, S. (2018). 'Electron transport in ultra-thin strained InGaAs MOS devices', Doctoral thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, accessed 26 June 2019, https://urn.nsk.hr/urn:nbn:hr:168:651466

Krivec S. Electron transport in ultra-thin strained InGaAs MOS devices [Doctoral thesis]. Zagreb: University of Zagreb, Faculty of Electrical Engineering and Computing; 2018 [cited 2019 June 26] Available at: https://urn.nsk.hr/urn:nbn:hr:168:651466

S. Krivec, "Electron transport in ultra-thin strained InGaAs MOS devices", Doctoral thesis, University of Zagreb, Faculty of Electrical Engineering and Computing, Zagreb, 2018. Available at: https://urn.nsk.hr/urn:nbn:hr:168:651466